Modelling of Thermal Behavior N-Doped Silicon Resistor

Effect of High Temperature Pre-Annealing on Thermal Donors in N-Doped CZ-Silicon

1 Department of Physics, Government P.G. College, Ramnagar, Nainital (Uttarakhand), INDIA. 2 Department of Physics, R.H. Govt. Post Graduate College, Kashipur, U S Nagar (Uttarakhand), INDIA. ______________________________________________________________________________________ Abstract: Role of high temperature pre-annealing at 1000 0 C for shorter duration of 10 h and longer duration of 40 h,...

Ultralow thermal conductivity of isotope-doped silicon nanowires.

The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with 50% isotope atoms. The thermal conductivity of isotopic-super...

Structural and thermal properties of silicon-doped fullerenes

Extensive Molecular Dynamics simulations have been performed to investigate the structural and thermal properties of Si-doped fullerenes containing one and two silicon atoms. Both, a many-body potential and ab initio Density Functional Theory ~DFT! have been used to investigate the structural features of the heterofullerenes. The competition between the exohedral and the substitutional types of...

Spin dependent recombination in F&doped silicon p-n junctions

Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (O/ ) at EC 0.23 eV and the donor level ( + 10) at E, ...

4. Vacancy formation in n-type silicon-doped GaAs